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Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 μm wavelength region) by selective-area growth

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8 Author(s)
Zhou, D. ; COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands ; Anantathanasarn, S. ; van Veldhoven, P.J. ; van Otten, F.W.M.
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The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100) pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaks are observed from individual and single QDs with wavelength tuned into the 1.55 μm telecom region by insertion of ultrathin GaAs interlayers beneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 13 )

Date of Publication:

Sep 2007

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