IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:13 Help

Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 μm wavelength region) by selective-area growth

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Zhou, D. ; COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands ; Anantathanasarn, S. ; van Veldhoven, P.J. ; van Otten, F.W.M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2790378 

The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100) pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaks are observed from individual and single QDs with wavelength tuned into the 1.55 μm telecom region by insertion of ultrathin GaAs interlayers beneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 13 )

Date of Publication: Sep 2007

Page(s):
131102 - 131102-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2790378
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2007

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.