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Switching characteristics of Cu2O metal-insulator-metal resistive memory

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6 Author(s)
Chen, A. ; Advanced Memory Development Group, Spansion LLC, 915 DeGuigne Drive, P.O. Box 3453, MS 177, Sunnyvale, California 94088-3453, USA ; Haddad, S. ; Wu, Y.C. ; Lan, Z.
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The Cu2O metal-insulator-metal (MIM) resistive switching memory was characterized on a 64 kb memory test array. The switching properties are consistent with the proposed switching model of conductivity modulation by a charge trapping process. Retention, programing characteristics, and temperature effects are analyzed based on the switching model. The measured characteristics and the switching model for Cu2O MIM are compared with those of other resistive switching materials. The statistical characteristics provide essential evidence for analysis of the switching mechanism and evaluation of the memory devices.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 12 )

Date of Publication:

Sep 2007

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