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Short-channel effect in organic thin film transistors with top-contact configuration is effectively suppressed to enhance the performance. The space charge limited current, which prevents the appearance of output saturation behavior, is sufficiently suppressed by reducing the thickness of both the pentacene film and the gate insulator. Molecular doping of the pentacene thin film in the contact reduces the contact resistance and allows a greater increase in field-effect mobility with decreasing channel length. These structural optimizations realize a submicrometer-channel transistor with clear saturation characteristics and low-voltage operation.