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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:11 Help

Phase transition temperature of SrTiO3 ultrathin films: An annealing study by ultraviolet Raman spectroscopy

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3 Author(s)
Shi, A.B. ; Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China ; Shen, W.Z. ; Wu, H.

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The authors present a detailed investigation of paraferroelectric phase transition temperature (TC) of SrTiO3 ultrathin films grown by molecular beam epitaxy on Si substrate under various annealing temperatures on the basis of recent understanding of the interfacial layer formation in constant oxygen atmosphere. They show that TC determined by the ultraviolet Raman spectroscopy is found to enhance linearly with the increasing compressive thermal strain. The present work demonstrates that the “strain engineering” room-temperature ferroelectricity in SrTiO3 films can also be realized through the rapid controlled annealing, in addition to the substitution of substrates in the literature.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 11 )

Date of Publication: Sep 2007

Page(s):
112910 - 112910-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2784171
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2007

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