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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:11 Help

Boron-doped a-Si:H/c-Si interface passivation: Degradation mechanism

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2 Author(s)
De Wolf, Stefaan ; National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Kondo, M.

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The authors report that for a-Si:H/c-Si heterostructure solar cell fabrication the presence of a boron-doped a-Si:H(p+) overlayer may cause H2 effusion from a (few nanometers) thin underlying intrinsic a-Si:H(i) film at moderate temperatures. This phenomenon is in agreement with losses in the electronic passivation quality of c-Si/a-Si:H(i)/a-Si:H(p+) structures occurring during low temperature (≤260 °C) postdeposition annealing. Consequently, it is argued that such passivation degradation is due to Si–H rupture in the a-Si:H(i) film, likely resulting in Si dangling bond defects, mediated by the presence of the doped layer.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 11 )

Date of Publication: Sep 2007

Page(s):
112109 - 112109-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2783972
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2007

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