By Topic

Low-resistance Ohmic contact on undoped AlGaN/GaN heterostructure with surface treatment using CCl2F2 reactive ion etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Zhou, X.J. ; Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui 230031, China ; Qiu, K. ; Ji, C.J. ; Zhong, F.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effects of the surface treatments on the performance of Ti/Al/Ti/Au Ohmic contacts to undoped AlGaN/GaN heterostructure are investigated. Contact resistance and specific contact resistivity as low as 0.25 Ω mm and 5.85×10-7 Ω cm2, respectively, have been achieved through pretreatment in CCl2F2 plasma followed by buffered oxide etch solution, with rapid thermal annealing at 900 °C for 30 s in a N2 ambient. The electrical quality and annealing temperature dependence of the metallization scheme are illustrated. Furthermore, excellent edge acuity is also demonstrated for this annealed Ti/Al/Ti/Au Ohmic contact.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 10 )