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Low-resistance Ohmic contact on undoped AlGaN/GaN heterostructure with surface treatment using CCl2F2 reactive ion etching

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6 Author(s)
Zhou, X.J. ; Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui 230031, China ; Qiu, K. ; Ji, C.J. ; Zhong, F.
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The effects of the surface treatments on the performance of Ti/Al/Ti/Au Ohmic contacts to undoped AlGaN/GaN heterostructure are investigated. Contact resistance and specific contact resistivity as low as 0.25 Ω mm and 5.85×10-7 Ω cm2, respectively, have been achieved through pretreatment in CCl2F2 plasma followed by buffered oxide etch solution, with rapid thermal annealing at 900 °C for 30 s in a N2 ambient. The electrical quality and annealing temperature dependence of the metallization scheme are illustrated. Furthermore, excellent edge acuity is also demonstrated for this annealed Ti/Al/Ti/Au Ohmic contact.

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Applied Physics Letters  (Volume:91 ,  Issue: 10 )