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418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga–N bond configuration?

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5 Author(s)
Ning, J.Q. ; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China ; Xu, S.J. ; Yu, D.P. ; Shan, Y.Y.
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A Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding β-Ga2O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral GaN6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation.

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Applied Physics Letters  (Volume:91 ,  Issue: 10 )