By Topic

418 cm-1 Raman scattering from gallium nitride nanowires: Is it a vibration mode of N-rich Ga–N bond configuration?

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ning, J.Q. ; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China ; Xu, S.J. ; Yu, D.P. ; Shan, Y.Y.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2780081 

A Raman-active vibration mode at 418 cm-1 is observed in wurtzite gallium nitride (GaN) nanowires synthesized by different growth methods. In particular, Raman scattering measurements of a number of GaN nanowires systematically prepared by nitriding β-Ga2O3 nanowires at different temperatures show an interesting evolution of the mode, revealing that it is most likely the vibration mode of N-rich octahedral GaN6 bonds. This idea is further supported by the high-resolution transmission electron microscopic observation.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 10 )