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Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

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5 Author(s)
Yang, Y.-J. ; Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan 106, Republic of China ; Ho, W.S. ; Huang, C.-F. ; Chang, S.T.
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The dependence of electron mobility on strain, channel direction, and substrate orientation is theoretically studied for the germanium n-channel metal-oxide-semiconductor field-effect transistors. For the unstrained channel, (111) substrate can provide the highest mobility among the three orientations, mainly due to its largest quantization mass and smallest conductivity mass in L valley. The tensile strain parallel to the [110] channel direction on (111) substrate gives 4.1 times mobility of Si at 1 MV/cm, and the mobility enhancement starts to saturate for the strain larger than 0.5%. The compressive strain of ∼1.5% transverse to [110] on (111) substrate yields 2.9 times mobility enhancement at 1 MV/cm.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 10 )

Date of Publication:

Sep 2007

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