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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:10 Help

Optical loss and interface morphology in AlGaAs/GaAs distributed Bragg reflectors

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4 Author(s)
Zhang, Z. ; Department of Microelectronics and Applied Physics, Royal Institute of Technology (KTH), Electrum 229, S-164 40 Kista, Sweden ; Marcks von Wurtemberg, R. ; Berggren, J. ; Hammar, M.

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It is shown that n-type doping of AlGaAs/GaAs distributed Bragg reflectors (DBRs) grown by metal-organic vapor-phase epitaxy has a profound negative impact on the performance of vertical-cavity surface-emitting lasers (VCSELs) based on such mirrors. Using an intracavity contact scheme, 1.3-μm-range InGaAs VCSELs with and without doping in the bottom DBR are directly compared. Doped mirrors lead to lower slope efficiency, lower output power, and higher threshold current. From x-ray diffraction, high-accuracy reflectance measurements, and atomic force microscopy studies, it is suggested that this performance degradation is due to the doping-enhanced Al–Ga interdiffusion, leading to interface roughening and increased scattering loss.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 10 )

Date of Publication: Sep 2007

Page(s):
101101 - 101101-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2779242
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Sep 2007

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