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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:1 Help

Quantum-confinement effect in individual Ge1-xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy

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3 Author(s)
Nakamura, Yoshiaki ; Quantum-Phase Electronics Center, Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and CREST, Japan Science and Technology Agency, Japan ; Masada, Akiko ; Ichikawa, Masakazu

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The authors observed a quantum-confinement effect in individual Ge1-xSnx quantum dots (QDs) on Si (111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy at room temperature. The quantum-confinement effect was featured by an increase in the energy band gap of ∼1.5 eV with a decrease in QD diameter from 35 to 4 nm. The peaks for quantum levels of QDs became broader with a decrease in the height-diameter aspect ratio of QDs, demonstrating the gradual emergence of two dimensionality in density of states of quasi zero-dimensional QDs with the QD flattening.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 1 )

Date of Publication: Jul 2007

Page(s):
013109 - 013109-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2753737
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2007

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