High temperature rapid thermal annealing of phosphorous ion implanted InAs/InP quantum dots

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The effect of high temperature annealing of the InAs/InP quantum dots (QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy (450 keV) phosphorous ion implantation at room temperature with doses of 5×10¹¹–5×10¹³ ions/cm² with subsequent high temperature (750–850 °C) rapid thermal annealing is also studied. A large implantation-induced energy shift of up to 309 meV (400 nm) is observed. The implanted samples annealed at 850 °C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750 °C.

Published in:
Applied Physics Letters (Volume:90 , Issue: 9 )

Date of Publication: Feb 2007

Page(s):: 093106 - 093106-3
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.2710006
Product Type:: Journals & Magazines

Date of Current Version :: 18 June 2009
Issue Date :: Feb 2007

Author(s)

Barik, S.
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, Australian Capital Territory 0200, Australia
Tan, H.H. ; Jagadish, C.