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Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy

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8 Author(s)
Van Gestel, D. ; IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium ; Romero, M.J. ; Gordon, I. ; Carnel, L.
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Defect etching revealed a very large density (∼109 cm-2) of intragrain defects in polycrystalline silicon (pc-Si) layers obtained through aluminum-induced crystallization of amorphous Si and epitaxy. Electron-beam-induced current measurements showed a strong recombination activity at these defects. Cathodoluminescence measurements showed the presence of two deep-level radiative transitions (0.85 and 0.93 eV) with a relative intensity varying from grain to grain. These results indicate that the unexpected quasi-independence on the grain size of the open-circuit voltage of these pc-Si solar cells is due to the presence of numerous electrically active intragrain defects.

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Applied Physics Letters  (Volume:90 ,  Issue: 9 )