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Embedment of ZnO nanoparticles in SiO2 by ion implantation and low-temperature oxidation

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6 Author(s)
Amekura, H. ; National Institute for Materials Science (NIMS), 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan ; Umeda, N. ; Boldyryeva, H. ; Kishimoto, N.
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Samples of silica glass (SiO2) implanted with 60 keV Zn ions to a fluence of 1.0×1017 ions/cm2 were annealed in oxygen gas to form ZnO nanoparticles (NPs). Although the ZnO NPs were formed mainly on the SiO2 surface after oxidation at 700 °C for 1 h, they were formed inside the SiO2 substrate after lower temperature and long-duration oxidation at 500 °C for ∼70 h, i.e., the embedment of ZnO NPs in SiO2 was attained. The embedded NPs show a slightly stronger exciton peak and much weaker defect luminescence than the NPs formed on the surface.

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Applied Physics Letters  (Volume:90 ,  Issue: 8 )