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Noncontact-mode scanning capacitance force microscopy towards quantitative two-dimensional carrier profiling on semiconductor devices

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5 Author(s)
Kimura, Kenjiro ; Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan ; Kobayashi, Kei ; Matsushige, Kazumi ; Usuda, K.
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Scanning capacitance force microscopy (SCFM) is a promising tool for investigation of two-dimensional carrier density distribution on semiconducting devices. Its sensitivity is strongly dependent on the Q factor of the mechanical resonance mode of the cantilever. Therefore, measurement in vacuum is more appropriate for increasing the sensitivity. In this letter, the authors describe noncontact-mode (NC) SCFM which is combined with the frequency modulation detection method and its signal characteristics. The authors derived a quasiquantitative calibration curve which correlates to the amplitude signal in NC-SCFM to the dopant density. Using the calibration curve, the authors obtained a quasiquantitative two-dimensional dopant density distribution map on a cross-sectional transistor device.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 8 )