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Measuring the hole chemical potential in ferromagnetic Ga1-xMnxAs/GaAs heterostructures by photoexcited resonant tunneling

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8 Author(s)
Thomas, O. ; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom ; Makarovsky, O. ; Patane, A. ; Eaves, L.
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The authors investigate the optical and electrical properties of a p-i-n GaAs/AlAs resonant tunneling diode in which the p-type layer is the ferromagnetic alloy semiconductor Ga1-xMnxAs (x=3%). The high density of Mn acceptors affects significantly the electrostatic potential profile of the heterostructure and inhibits hole tunneling from Ga1-xMnxAs.The authors use photoconductivity to probe this potential and measure the hole chemical potential in Ga1-xMnxAs relative to the band edges of the adjacent undoped GaAs layers.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 8 )