By Topic

Surface modification of MgAl2O4 (111) for growth of high-quality ZnO epitaxial films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
8 Author(s)
Zeng, Z.Q. ; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China ; Liu, Y.Z. ; Yuan, H.T. ; Mei, Z.X.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A magnesium wetting layer was used to modify the surface structure of MgAl2O4 (111) substrate to achieve growth of high-quality ZnO film by radio frequency plasma-assisted molecular beam epitaxy. It is found that this magnesium layer plays a crucial role in 30° rotation domain elimination, defect density reduction, and polarity control of ZnO film, as demonstrated by in situ reflection high-energy electron diffraction and ex situ transmission electron microscopy. Atomic force microscopy observation shows smooth ZnO surfaces with clearly resolved atomic steps of the films.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 8 )