Laser-induced Ni(Pt) germanosilicide formation on Si1-xGex/Si substrate has resulted in the formation of smooth Ni(Pt) germanosilicide/Si interface with minimum interface roughness which is preferred as a contact material. A confined (self-limiting) melting phenomenon occurred during the laser-induced silicidation process at laser fluence of 0.4 J cm-2 (just at the melting threshold of the sample). This phenomenon is caused by significant differences in material properties of Si1-xGex alloy and Si substrates. Formation of highly textured [Ni1-v(Pt)v](Si1-yGey) phase was detected in the sample after 20-pulsed laser thermal annealing at 0.4 J cm-2. The formation mechanism of the Ni(Pt) monogermanosilicide is discussed.