By Topic

Negative differential resistance in tunneling transport through C60 encapsulated double-walled carbon nanotubes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Li, Y.F. ; Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan ; Hatakeyama, R. ; Kaneko, T. ; Kato, T.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The authors report electric transport properties of resonance tunneling field-effect transistors fabricated using C60-filled metallic double-walled carbon nanotubes. The devices exhibit strong resonance tunneling characteristics and the distinct negative differential resistance with high peak-to-valley current ratio about 1300 is observed at room temperature. In particular, at high bias voltages, the tunneling current is completely dominated by the Coulomb oscillation peaks with uniform conductance at room temperature, reflecting a strong single-electron tunneling effect.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 7 )