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Negative differential resistance in tunneling transport through C60 encapsulated double-walled carbon nanotubes

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5 Author(s)
Li, Y.F. ; Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan ; Hatakeyama, R. ; Kaneko, T. ; Kato, T.
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The authors report electric transport properties of resonance tunneling field-effect transistors fabricated using C60-filled metallic double-walled carbon nanotubes. The devices exhibit strong resonance tunneling characteristics and the distinct negative differential resistance with high peak-to-valley current ratio about 1300 is observed at room temperature. In particular, at high bias voltages, the tunneling current is completely dominated by the Coulomb oscillation peaks with uniform conductance at room temperature, reflecting a strong single-electron tunneling effect.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 7 )

Date of Publication:

Feb 2007

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