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Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

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7 Author(s)
Yoshikawa, A. ; Department of Electronics and Mechanical Engineering and InN-Project as a CREST-program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan ; Che, S.B. ; Yamaguchi, W. ; Saito, H.
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The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 7 )