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Electrical characterization and hydrogen gas sensing properties of a n-ZnO/p-SiC Pt-gate metal semiconductor field effect transistor

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5 Author(s)
Kandasamy, S. ; Sensor Technology Laboratory, School of Electrical and Computer Engineering, RMIT University, Melbourne 3001, Australia ; Wlodarski, W. ; Holland, A. ; Nakagomi, S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2450668 

A new hydrogen gas sensitive n-ZnO/p-SiC Pt-gate metal semiconductor field effect transistor (MESFET) is reported. The observed current-voltage curves for the source to drain region indicate that this MESFET operates in enhancement mode. A change in gate potential, due to different ambient atmospheres caused a change in the width of the depletion region, hence modulating the current in the n channel (ZnO layer). The H2 gas sensing mechanism of the presented MESFET structure is discussed using energy band diagrams.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 6 )

Date of Publication:

Feb 2007

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