Cart (Loading....) | Create Account
Close category search window

Electrical characterization and hydrogen gas sensing properties of a n-ZnO/p-SiC Pt-gate metal semiconductor field effect transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kandasamy, S. ; Sensor Technology Laboratory, School of Electrical and Computer Engineering, RMIT University, Melbourne 3001, Australia ; Wlodarski, W. ; Holland, A. ; Nakagomi, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A new hydrogen gas sensitive n-ZnO/p-SiC Pt-gate metal semiconductor field effect transistor (MESFET) is reported. The observed current-voltage curves for the source to drain region indicate that this MESFET operates in enhancement mode. A change in gate potential, due to different ambient atmospheres caused a change in the width of the depletion region, hence modulating the current in the n channel (ZnO layer). The H2 gas sensing mechanism of the presented MESFET structure is discussed using energy band diagrams.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 6 )

Date of Publication:

Feb 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.