By Topic

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Pennington, G. ; Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 ; Goldsman, N. ; Akturk, A. ; Wickenden, A.E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2437127 

Theoretical calculations of carrier transport in semiconducting single-walled carbon nanotubes are compared with recent experiments. Considering carrier-phonon scattering, a deformation potential coupling constant of 14 eV is determined. Theory predicts the low-field mobility, conductance, and on resistance of field-effect transistors as a function of nanotube diameter and temperature. When the device is in the on state, the mean free path (Lm-on) varies linearly with tube diameter and inversely with temperature. Intersubband scattering is found to strongly decrease Lm-on when a few subbands are occupied.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 6 )