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Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

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4 Author(s)
Pennington, G. ; Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 ; Goldsman, N. ; Akturk, A. ; Wickenden, A.E.

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Theoretical calculations of carrier transport in semiconducting single-walled carbon nanotubes are compared with recent experiments. Considering carrier-phonon scattering, a deformation potential coupling constant of 14 eV is determined. Theory predicts the low-field mobility, conductance, and on resistance of field-effect transistors as a function of nanotube diameter and temperature. When the device is in the on state, the mean free path (Lm-on) varies linearly with tube diameter and inversely with temperature. Intersubband scattering is found to strongly decrease Lm-on when a few subbands are occupied.

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Applied Physics Letters  (Volume:90 ,  Issue: 6 )