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Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance

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8 Author(s)
Kudrawiec, R. ; Solid State and Photonics Laboratory, Department of Electrical Engineering, 311X CISX, Via Ortega, Stanford University, Stanford, California 94305-4075 ; Yuen, H.B. ; Bank, S.R. ; Bae, H.P.
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Contactless electroreflectance (CER) spectroscopy has been applied to study band bending in GaInNAsSb/GaAs quantum well (QW) structures. It has been observed that CER features significantly changes upon annealing: the period of GaAs-related Franz-Keldysh oscillations increases; intensities of excited QW transitions rose compared to the intensity of the fundamental QW transition. The observed changes in CER spectra have been explained by a shift of the Fermi level in the GaInNAsSb layer: the defect states in as-grown GaInNAsSb tend to pin the Fermi level at an energy characteristic for these defects; annealing removes defects from this material and effectively shifts the Fermi level to the conduction band.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 6 )

Date of Publication:

Feb 2007

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