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Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3

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5 Author(s)
Wang, M. ; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 ; He, W. ; Ma, T.P. ; Edge, L.F.
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Electron tunneling spectroscopy (ETS) was used to study amorphous LaAlO3 and LaScO3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate dielectrics were prepared by molecular-beam deposition on (100) Si substrates. The authors have obtained vibrational modes for amorphous LaAlO3 and LaScO3 thin films from the ETS spectra, which provide information about the chemical bonding in these films and the interface with silicon. Traps and defects in amorphous LaAlO3 thin films are revealed in the ETS spectra, and their physical locations and energy levels are identified.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 5 )

Date of Publication:

Jan 2007

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