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Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states

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5 Author(s)
Hall, K.C. ; Department of Physics, Dalhousie University, Halifax, Nova Scotia B3H3J5, Canada ; Koerperick, E.J. ; Boggess, Thomas F. ; Shchekin, O.B.
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The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial transfer of population from optically active to dark states. The results indicate that electron-hole exchange interactions play a negligible role in the carrier spin kinetics, and are consistent with a mechanism of hole spin relaxation via phonon-mediated virtual scattering between confined quantum dot states.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 5 )