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High TC ferromagnetism of Zn(1-x)CoxO diluted magnetic semiconductors grown by oxygen plasma-assisted molecular beam epitaxy

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8 Author(s)
Liu, G.L. ; School of Physics and Microelectronics, Shandong University, Jinan, Shandong 250100, People’s Republic of China and National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, People’s Republic of China ; Cao, Q. ; Deng, J.X. ; Xing, P.F.
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Co-doped wurtzite ZnO [Zn(1-x)CoxO] thin films have been grown on Al2O3(0001) substrates by using oxygen plasma-assisted molecular beam epitaxy at the low growth temperature of 450 °C. The epitaxial films of Co concentration at 0≤x≤0.12 are single crystalline, which were examined by reflection high energy electron diffraction and x-ray diffraction. Both of optical transmission spectrum and in situ. x-ray photoelectron spectroscopy studies confirmed the incorporation of Co2+ cations into wurtzite ZnO lattice. Magnetic measurements revealed that the Zn(1-x)CoxO thin films are ferromagnetic with Curie temperature TC above room temperature, and the ferromagnetism shows intrinsic characteristic.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 5 )

Date of Publication: Jan 2007

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