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Short-wavelength (λ≈3.05 μm) InP-based strain-compensated quantum-cascade laser

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4 Author(s)
Semtsiv, M.P. ; Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany ; Wienold, M. ; Dressler, S. ; Masselink, W.T.

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The design and implementation of a short-wavelength quantum-cascade laser based on the strain-compensated In0.73Ga0.27AsIn0.55Al0.45AsAlAs heterosystem on InP is described. Lasers with a reduced level of doping in the active region require a larger bias voltage and emit at shorter wavelength; the emission wavelength is 3.05 μm at T≈80 K. The lasers operate up to T≈150 K and electroluminescence persists up to room temperature, where the peak position is close to 3.3 μm. The short-wavelength limit of such lasers is evaluated based on the dependence of their maximum operation temperatures and on the probable energies of the indirect valleys in the active region.

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Applied Physics Letters  (Volume:90 ,  Issue: 5 )