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Kinetic study of Al-mole fraction in AlxGa1-xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy

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9 Author(s)
Xi, Y.A. ; Future Chips Constellation, Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 ; Chen, K.X. ; Mont, F.W. ; Kim, J.K.
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A systematic study is performed on the dependence of the Al-mole fraction in AlxGa1-xN on the organometallic group-III precursor flow during metal-organic vapor-phase epitaxy. When keeping the total organometallic volume flow constant, a nonlinear concave bowing relationship is found between the Al-mole fraction (for 0≤x≤1) and the relative trimethylaluminum volume flow. A kinetic model, which takes into account the growth rate ratio between GaN and AlN (gGaN/gAlN), is developed to explain such concave bowing relationship. The experimental data are in excellent agreement with the theoretical model. For AlxGa1-xN growth on AlN bulk substrates, it is found that the Al-mole fraction is smaller and the growth rate ratio is larger than on sapphire substrates. The authors also investigate the incorporation of Al in AlxGa1-xN as a function of the group-III precursor molar flow rate. A positive convex bowing relationship is found between Al-mole fraction and the relative trimethylaluminum molar flow, which is consistent with our model.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 5 )

Date of Publication:

Jan 2007

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