System Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/n-GaN Schottky contacts [Appl. Phys. Lett. 90, 046101 (2007)]”

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Wang, R.X. ; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China ; Xu, S.J. ; Beling, C.D. ; Cheung, C.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2435356 

First Page of the Article

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 4 )