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Response to “Comment on Influence of indium tin oxide thin-film quality on reverse leakage current of indium tin oxide/n-GaN Schottky contacts [Appl. Phys. Lett. 90, 046101 (2007)]”

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4 Author(s)
Wang, R.X. ; Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China ; Xu, S.J. ; Beling, C.D. ; Cheung, C.K.

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Applied Physics Letters  (Volume:90 ,  Issue: 4 )