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Effect of 3C-SiC(100) initial surface stoichiometry on bias enhanced diamond nucleation

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6 Author(s)
Arnault, J.C. ; CEA Saclay DSM-DRECAM-SPCSI, 91191 Gif sur Yvette, France ; Intiso, L. ; Saada, S. ; Delclos, S.
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Two 3C-SiC(100) reconstructed surfaces have been exposed to bias enhanced nucleation (BEN) treatments performed in a microwave plasma chemical vapor deposition reactor. For both BEN steps, a significant enhancement of the diamond nucleation density has been observed on the initial C-terminated surface compared to the Si-rich surface. Samples have been characterized by in situ surface analysis, namely, x-ray photoelectron spectroscopy and x-ray Auger electron spectroscopy, and by field emission gun scanning electron microscopy.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 4 )

Date of Publication:

Jan 2007

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