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Browse Journals & Magazines > Applied Physics Letters ...> Volume:90 Issue:4 Help

Critical diameter for III-V nanowires grown on lattice-mismatched substrates

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6 Author(s)
Chuang, Linus C. ; Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 ; Moewe, Michael ; Chase, C. ; Kobayashi, Nobuhiko P.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2436655 

The authors report the experimental observation of a critical diameter (CD) of III-V compound semiconductor epitaxial nanowires (NWs) grown on lattice-mismatched substrates using Au-catalyzed vapor-liquid-solid growth. The CD is found to be inversely proportional to the lattice mismatch. NWs with well-aligned orientation are synthesized with catalysts smaller than the CD. Well-aligned InP NWs grown on a Si substrate exhibit a record low photoluminescence linewidth (5.1 meV) and a large blueshift (173 meV) from the InP band gap energy due to quantization. Well-aligned InAs NWs grown on a Si substrate are also demonstrated.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 4 )

Date of Publication: Jan 2007

Page(s):
043115 - 043115-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2436655
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jan 2007

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