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Browse Journals & Magazines > Applied Physics Letters ...> Volume:90 Issue:4 Help

Photogalvanic effects for interband absorption in AlGaN/GaN superlattices

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4 Author(s)
Cho, K.S. ; Department of Physics, National Taiwan University, Taipei 106, Taiwan ; Chen, Y.F. ; Tang, Y.Q. ; Shen, B.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2435591 

The linear and circular photogalvanic effects (CPGEs), induced by ultraviolet (325 nm) radiation, have been observed in the (0001)-oriented Al0.15Ga0.85N/GaN superlattices. The CPGE current changes sign upon reversing the radiation helicity, and it is up to two orders of magnitude larger than that obtained by far-infrared radiation. This result suggests the existence of a sizeable Rashba spin splitting in AlGaN/GaN superlattices. It also provides a possibility for the generation of spin orientation-induced current at room temperature.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 4 )

Date of Publication: Jan 2007

Page(s):
041909 - 041909-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2435591
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jan 2007

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