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Sputtered gold as an effective Schottky gate for strained Si/SiGe nanostructures

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5 Author(s)
Scott, G.D. ; Department of Physics and Astronomy, UCLA, Los Angeles, California 90095 ; Xiao, M. ; Jiang, H.W. ; Croke, E.T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2430935 

Metallization of Schottky surface gates by sputtering Au on strained Si/SiGe heterojunctions enables the depletion of the two dimensional electron gas at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of submicron Au electrodes sputtered onto Si/SiGe without the need of a wetting layer.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 3 )

Date of Publication:

Jan 2007

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