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Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon

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5 Author(s)
Liu, J.P. ; Technology Development, Chartered Semiconductor Manufacturing, Ltd., Singapore 738406, Singapore and School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore ; Li, J. ; See, A. ; Zhou, M.S.
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The authors report on the implant damage and strain relaxation in embedded silicon germanium (SiGe) layer, selectively grown on recessed silicon (Si) (001) with different recess length (defined as [110] direction, along the conventional Si transistor channel) and the same width (defined as [1-10] direction). Similar to the implant damage in blanket epi-SiGe layers on Si (001) reported previously, they observed two defect bands, one close to the surface and the other at SiGe/Si interface. Unlike the biaxial strain relaxation with misfit dislocations equally distributed along both the [110] and [1-10] directions in blanket epi-SiGe layers on Si (001), there is a gradual change from biaxial to uniaxial relaxation with misfit dislocations along only at the [1-10] direction and a decreasing density of misfit dislocation, with decreasing recess length.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 26 )