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Efficient green emission from (1122) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

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7 Author(s)
Kawakami, Y. ; Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan ; Nishizuka, K. ; Yamada, D. ; Kaneta, A.
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Nanoscopic optical characterization using scanning near field optical microscopy was performed on a (1122) microfacet quantum well (QW). It was revealed that the carrier diffusion length in the (1122) QW is less than the probing fiber aperture of 160 nm, which is shorter than that of the (0001) QWs and is attributed to much faster radiative recombination processes in the (1122) QW due to a reduced internal electric field. Owing to this short diffusion length, the correlation between the internal quantum efficiency (IQE) and emission wavelength is elucidated. The highest IQE is ∼50% at 520 nm, which is about 50 nm longer than in (0001) QWs, suggesting that the (1122) QW is a suitable green emitter.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 26 )

Date of Publication:

Jun 2007

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