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Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor

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The electric and hydrogen sensing properties of an interesting Pd-gate metal-semiconductor-type high electron mobility transistor are comprehensively studied. The dipolar layer formed by adsorbed hydrogen atoms at the semiconductor of Pd–AlGaAs interface is equivalent to a two-dimensional layer. The concentration of available hydrogen adsorption sites at the metal-semiconductor interface ni and the effective distance d from the Pd–AlGaAs interface to adsorbed hydrogen atoms are 9.5×1013 cm-2 and 3 Å, respectively. Furthermore, the simulated curves are in excellently agreement with the experimental results.

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Applied Physics Letters  (Volume:90 ,  Issue: 25 )