Ni silicide nanowires were grown by plasma-enhanced chemical vapor deposition at 350 °C. Transmission electron microscope analysis showed that Ni silicide nanowire has a single crystalline Ni3Si2 structure. The nanowire alignment was controlled by dielectrophoretic method and two nanowires were placed onto Pt electrodes under an ac biasing of 10 Vp-p at 100 kHz. The electric characteristics of the nanowire were obtained from double connection and single connection of 5.07 and 10.44 kΩ, respectively. The resistivity values were obtained to be 183 and 208 μΩ cm, showing a uniform performance of the connection.