By Topic

Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In–Ga–Zn–O system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Iwasaki, T. ; Canon Research Center, Canon, Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan ; Itagaki, N. ; Den, Tohru ; Kumomi, Hideya
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In–Ga–Zn–O semiconductor channels. A large number of TFTs, having n-type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In–Ga–Zn–O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 24 )