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Browse Journals & Magazines > Applied Physics Letters ...> Volume:90 Issue:24 Help

Light enhancement by the formation of an Al oxide honeycomb nanostructure on the n-GaN surface of thin-GaN light-emitting diodes

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7 Author(s)
Lin, C.L. ; Department of Chemical and Materials Engineering, National Central University, Jhong-Li, 32001 Taiwan, Republic of China ; Chen, P.H. ; Chan, Chia-Hua ; Lee, C.C.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2748329 

By using a micron polystyrene ball array as a template, an Al oxide honeycomb structure was produced on the n-GaN surface of a thin-GaN light-emitting diode (LED). The Al oxide honeycomb structure consists of the networking hexagonal Al oxide nanowall. With the Al oxide honeycomb nanostructure, the total lighting output of thin-GaN LED was enhanced by 35%. The authors believe that the networking nanowall of the Al oxide honeycomb structure acted as a waveguide to extract the light emitted to the outer medium effectively.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 24 )

Date of Publication: Jun 2007

Page(s):
242106 - 242106-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2748329
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2007

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