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Improved long-term thermal stability of InGaN/GaN multiple quantum well light-emitting diodes using TiB2- and Ir-based p-Ohmic contacts

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5 Author(s)
Stafford, L. ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Voss, L.F. ; Pearton, S.J. ; Wang, H.T.
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InGaN/GaN multiple quantum well light-emitting diodes (MQW-LEDs) were fabricated with either Ni/Au/TiB2/Ti/Au or Ni/Au/Ir/Au p-Ohmic contacts and annealed at 200 and 350 °C for 45 days. By comparison with companion devices with conventional Ni/Au Ohmic contacts fabricated on the same wafer, MQW-LEDs with TiB2- and Ir-based Ohmic metallization schemes showed superior long-term thermal stability as judged by the change in turn-on voltage, leakage current, and output power, a promising result for applications where reliable operation at high temperature is required.

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Applied Physics Letters  (Volume:90 ,  Issue: 24 )