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Gain characteristics of InAs/InGaAsP quantum dot semiconductor optical amplifiers at 1.5 μm

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7 Author(s)
Kim, N.J. ; Department of Physics, Chungnam National University, Daejeon 305-764, Korea ; Oh, J.M. ; Kim, M.D. ; Lee, D.
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The authors have fabricated ridge waveguide quantum dot (QD) semiconductor optical amplifiers (SOAs) on InP substrates that operate in the 1.5 μm region. The active layer consists of InAs/InGaAsP QD layers with a high dot density, but which still have good isolation between dots in the lateral and vertical directions, as confirmed by time-resolved photoluminescence measurements. One of these QD SOAs exhibited a fiber-to-fiber gain of 22.5 dB and a chip gain of 37 dB at 1.51 μm. The spectral gain shape was found to be maintained for variations of the peak gain from 12 to 22 dB, reflecting the zero-dimensional density of states at room temperature.

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Applied Physics Letters  (Volume:90 ,  Issue: 24 )