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Electron channeling contrast imaging of atomic steps and threading dislocations in 4H-SiC

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7 Author(s)
Picard, Y.N. ; Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 ; Twigg, M.E. ; Caldwell, J.D. ; Eddy, C.R., Jr.
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Direct imaging of atomic step morphologies and individual threading dislocations in on-axis epitaxial 4H-SiC surfaces is presented. Topographically sensitive electron images of the crystalline surfaces were obtained through forescattered electron detection inside a conventional scanning electron microscope. This technique, termed electron channeling contrast imaging (ECCI), has been utilized to reveal the configuration of highly stepped, homoepitaxial 4H-SiC films grown on 4H-SiC mesa structures. Individual threading dislocations have been consistently imaged at the core of spiral atomic step morphologies located on the 4H-SiC surfaces. The ability of ECCI to image atomic steps was verified by atomic force microscopy.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 23 )

Date of Publication:

Jun 2007

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