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Browse Journals & Magazines > Applied Physics Letters ...> Volume:90 Issue:23 Help

Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation

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7 Author(s)
Hood, Andrew ; Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 ; Delaunay, P.-Y. ; Hoffman, D. ; Binh-Minh Nguyen
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2747172 

Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment nor time, has been prepared by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer. Passivated photodiodes, with dimensions ranging from 400×400 to 25×25 μm2, with a cutoff wavelength of ∼11 μm, exhibited near bulk-limited R0A values of ∼12 Ω cm2, surface resistivities in excess of 104 Ω cm, and very uniform current-voltage behavior at 77 K.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 23 )

Date of Publication: Jun 2007

Page(s):
233513 - 233513-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2747172
Date of Current Version :
18 June 2009
Issue Date :
Jun 2007

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