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Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain

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8 Author(s)
Cohen, G.M. ; IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 ; Rooks, M.J. ; Chu, J.O. ; Laux, S.E.
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The authors report the fabrication of a p-field effect transistor (FET) and an n-FET with a silicon nanowire channel and doped silicon source and drain regions. The silicon nanowires were synthesized by the vapor-liquid-solid method. For p-FETs the source and drain regions were formed by adding boron doped silicon to the unintentionally doped nanowire body at predefined locations using in situ doped silicon epitaxy. For n-FETs the epitaxial source and drain regions were grown undoped and were later implanted with P and As. The measured Id-Vg characteristics of the devices exhibited unipolar transport, while reference FETs made with nanowires from the same batch but with Schottky (metal) contacts exhibited ambipolar characteristics.

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Applied Physics Letters  (Volume:90 ,  Issue: 23 )