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Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy

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9 Author(s)
Ji, C.J. ; Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui 230031, China ; Cao, X.C. ; Han, Q.F. ; Qiu, K.
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A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As2/Ga flux ratio. It is found that the L3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d5 high-spin state is obtained. It can be attributed to breaking the MnSMnI pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 23 )

Date of Publication:

Jun 2007

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