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InAsSb/GaSb heterostructure based mid-wavelength-infrared detector for high temperature operation

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5 Author(s)
Sharabani, Y. ; Solid State Physics, Electro-Optics Division, Soreq NRC, Yavne 81800, Israel ; Paltiel, Y. ; Sher, A. ; Raizman, A.
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The properties of a midinfrared photodetector, based on a lattice matched n-N InAs0.91Sb0.09/GaSb type-II heterostructure, were investigated. The relatively simple two layer structure shows very promising characteristics for sensitive and dual color infrared detection. I-V characteristics and spectral response were measured at the temperature range of 10–300 K. High zero-bias resistance area product R0A of 2.5 Ω cm2 was obtained at room temperature. The measured background limited infrared photodetection temperature was 180 K corresponding to 4.1 μm cutoff. Shot and Johnson noise limited detectivities corresponding to InAsSb absorption were measured to be 1.3×1010 and 4.9×109 cm Hz1/2 W-1 at 180 and 300 K, respectively. An enhanced optical response with gain larger than unity was observed below 120 K. Bias tunable dual color detection was demonstrated at all measured temperatures.

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Applied Physics Letters  (Volume:90 ,  Issue: 23 )