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Temperature dependent study of InAlAsInP/GaAsSb/InP double heterojunction bipolar transistors

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5 Author(s)
Che-Ming Wang ; Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan ; Yue-Ming Hsin ; Zhu, Haijun ; Kuo, J.-M.
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InAlAsInP/GaAsSb/InP double heterojunction bipolar transistors (HBTs) with InAlAs–InP composite emitter have been grown, fabricated, and characterized at various temperatures from 77 to 400 K. The InAlAs–InP composite emitter structure effectively reduces electron pileup in the InP/GaAsSb base-emitter junction and hence increases current gain, especially in the low-base-current region. The turn-on voltage shows a slightly different temperature dependence (-1.66 mV/K) from conventional InGaAs based HBTs due to the composite emitter. The activation energy study for the base (0.74 eV) and collector currents (0.98 eV) indicates the high quality of the base layer and the effect of InAlAs–InP composite emitter.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 23 )

Date of Publication:

Jun 2007

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