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Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm

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6 Author(s)
Binh-Minh Nguyen ; Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 ; Hoffman, D. ; Wei, Yajun ; Delaunay, P.-Y.
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The authors report the dependence of the quantum efficiency on device thickness of type-II InAs/GaSb superlattice photodetectors with a cutoff wavelength around 12 μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12 μm cutoff wavelength photodiodes with a π-region thickness of 6.0 μm. The R0A value is kept stable for the range of structure thicknesses allowing for a specific detectivity

(2.2×1011 cm 
 Hz
/W)
.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 23 )