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Nonvolatile polycrystalline silicon thin film transistor memory using silicon-rich silicon nitride as charge storage layer

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3 Author(s)
Pei, Z. ; Graduate Institute of Optoelectronic, Department of Electrical Engineering, and Center of Nanoscience and Nanotechnology, National Chung Hsing University, 402 Taichung, Taiwan, Republic of China ; Chung, A. ; Hwang, H.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2745265 

In this work, the authors report a memory device based on a Si thin film transistor (TFT) structure by incorporating silicon-rich silicon nitride (SRSN) film in the gate dielectric stacks as the charge storage layer. The SRSN film has a lower barrier for hole injection than the barrier for electron injection. Therefore, the memory window is dominated by hole injection. The memory window for TFT nonvolatile memory at steady state as large as 6.8 V is observed, and the memory window is around 3 V under pulse operation. In addition, this TFT memory has no significant degradation after 500 times of switching operation.

Published in:

Applied Physics Letters  (Volume:90 ,  Issue: 22 )

Date of Publication:

May 2007

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