Fabrication of high performance top-gate complementary inverter using a single carbon nanotube and via a simple process

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High performance complementary inverters have been fabricated using single-walled carbon nanotubes. The Al₂O₃ top-gate dielectric is grown via first depositing an Al film followed by complete oxidation of the film. It is shown that the quality of the Al₂O₃ film can be significantly improved by annealing at 400 °C, and stable p-type and n-type carbon nanotube field-effect transistors (CNTFETs) may be fabricated using either Pd (p-type) or Al (n-type) electrodes. High performance complementary inverter is demonstrated by integrating the p-type and n-type CNTFETs on the same carbon nanotube, and a gain of about 3.5 is achieved.

Published in:
Applied Physics Letters (Volume:90 , Issue: 22 )

Date of Publication: May 2007

Page(s):: 223116 - 223116-3
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.2745646
Product Type:: Journals & Magazines

Date of Current Version :: 18 June 2009
Issue Date :: May 2007

Author(s)

Hu, Y.F.
Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China and Department of Electronics, Peking University, Beijing 100871, China
Yao, K. ; Wang, S. ; Zhang, Z.Y. ; Liang, X.-L. ; Chen, Q. ; Peng, L.-M. ; Yao, Y.G. ; Zhang, J. ; Zhou, W.W. ; Li, Y.