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Browse Journals & Magazines > Applied Physics Letters ...> Volume:90 Issue:22 Help

Growth and photoluminescence studies of a-plane AlN/AlxGa1-xN quantum wells

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4 Author(s)
Al tahtamouni, T.M. ; Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 ; Sedhain, A. ; Lin, J.Y. ; Jiang, H.X.

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Both a-plane and c-plane AlN/Al0.65Ga0.35N quantum wells (QWs) have been grown by metal organic chemical vapor deposition and their photoluminescence (PL) emission properties were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width Lw for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs. Moreover, Lw dependence studies also revealed that structures with Lw≫2 nm and Lw≈2 nm provide highest emission efficiency in a-plane and c-plane AlN/Al0.65Ga0.35N QWs, respectively.

Published in:
Applied Physics Letters  (Volume:90 ,  Issue: 22 )

Date of Publication: May 2007

Page(s):
221105 - 221105-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2743956
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2007

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